Non‐Volatile Photo‐Switch Using a Diamond pn Junction (Adv. Electron. Mater. 1/2022)
نویسندگان
چکیده
Diamond Junction Field Effect Transistor Ultrawide bandgap semiconductors offer a new playground for researchers thanks to their huge energy scale. In article 2100542, Julien Pernot and co-workers create diamond junction field effect transistor from non-volatile photo-switch by taking advantage of the deep ionisation nitrogen donor in n-type region. The state can only be switched under illumination. dark, stores before switching off.
منابع مشابه
Metamaterials: Snapping Mechanical Metamaterials under Tension (Adv. Mater. 39/2015).
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2022
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202270004